1 www.irf.com junction size: rectangular 207 x 157 mils wafer size: 4" v rrm class: 200 to 600 v passivation process: glassivated moat reference ir packaged part: 20etf series fast recovery diodes ir207lm..cs02cb series major ratings and characteristics parameters units test conditions v fm maximum forward voltage 1300 mv t j = 25c, i f = 20 a v rrm reverse breakdown voltage range 200 to 600 v t j = 25c, i rrm = 100 a (1) mechanical characteristics nominal back metal composition, thickness cr - ni - ag (1 ka - 4 ka - 6 ka) nominal front metal composition, thickness 100% al, (20 m) chip dimensions 207 x 157 mils (5.26x3.99 mm) - see drawing wafer diameter 100 mm, with std. < 110 > flat wafer thickness 260 m maximum width of sawing line 45 m reject ink dot size 0.25 mm diameter minimum ink dot location see drawing recommended storage environment storage in original container, in dessicated nitrogen, with no contamination bulletin i0138j rev. a 05/00 (1) nitrogen flow on die edge.
2 www.irf.com ir207lm..cs02cb series ir 207 l m 06 c s02 cb 1 23 1 - international rectifier device 2 - chip dimension in mils 3 - type of device: l = wire bondable fast recovery diode 4 - passivation process: m = glassivated moat 5 - voltage code: code x 100 = v rrm 6 - metallization: c = aluminium (anode) - silver (cathode) 7 -t rr code: s02 = 200 nsec 8 - cb = probed uncut die (wafer in box) none = probed die in chip carrier 4 device code ordering information table 56 7 outline table available class 02 = 200 v 04 = 400 v 06 = 600 v 8 bulletin i0138j rev. a 05/00 all dimensions are in millimeters (mils)
3 www.irf.com ir207lm..cs02cb series top view n 304 basic cells wafer layout all dimensions are in millimeters bulletin i0138j rev. a 05/00
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